Common Failure Modes of Chips: Analysis of ESD and EOS
Common Failure Modes of Chips: Analysis of ESD and EOS
Blog Article
Chips often face two primary failure risks during use and production: Electrostatic Discharge (ESD) and Electrical Overstress (EOS). Below is a concise explanation of these failure modes, their characteristics, hazards, and protection measures. Many distributors offer a wide range of electronic components to cater to diverse application needs, like MC1488P
Electrostatic Discharge (ESD)
Definition ESD (Electrostatic Discharge) refers to transient high voltage caused by static electricity accumulation and discharge, which can damage chips and other electronic components.
Causes
Human Body Model (HBM): Static electricity from the human body discharges through the chip pins.
Machine Model (MM): Static electricity from equipment discharges through the chip pins.
Charged Device Model (CDM): Static electricity accumulated within the chip discharges.
Field-Induced Model (FIM): Variations in electric fields cause abnormal charge distribution within the chip, triggering a discharge.
Hazards
Component Damage: Insulation layer breakdown, metal fracture, etc.
Performance Degradation: Reduced reliability over prolonged use.
Data Loss: Stored data in memory chips may be lost.
Protection Measures
Static Dissipation: Use anti-static mats and other dissipative materials.
Static Discharge: Ground equipment and personnel.
Static Neutralization: Utilize ionizing blowers to neutralize static electricity.
Static Shielding: Use enclosed conductive materials to shield static sources.
Environmental Humidification: Increase humidity to lower static risk.
Electrical Overstress (EOS)
Definition EOS (Electrical Overstress) refers to a phenomenon where the voltage or current applied to a chip exceeds its maximum tolerance, resulting in performance degradation or direct damage.
Causes
Power Interference: Voltage spikes or power ripples.
Voltage Surges: High voltage caused by lightning or electromagnetic interference.
Grounding Issues: Voltage spikes due to ground bounce.
Testing Design Flaws: Incorrect test signal application.
Hazards
Physical Damage: Internal overheating leading to package charring or wire melting.
Performance Degradation: Reduced stability and abnormal operation.
Reliability Issues: Increased failure rates over extended use.
Protection Measures
Resistors and TVS Diodes: Limit excessive current from entering the chip.
Anti-Static Packaging: Reduce static generation and conduction.
Safe Workstations: Prevent damage from transient spikes.
Optimized Design and Manufacturing: Enhance voltage tolerance and rationally layout circuits.
Conclusion
Through scientific protective design and production management, ESD and EOS-related chip damage can be effectively minimized, thereby improving product reliability and service life.